| PART |
Description |
Maker |
| IRU3007 IRU3007CW IRLR024 MBRB1035 HIP6019 IRL3103 |
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK / NON-SYNCHRONOUS /ADJUSTABLE LDO AND 200mA ON-BOARD LDO
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK/ NON-SYNCHRONOUS/ADJUSTABLE LDO AND 200mA ON-BOARD LDO
5 Bit Prog SynchBuck CIC Non Synch Adj LDO 200mA in a 28-Pin SOIC(WB) package
|
IRF[International Rectifier]
|
| MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HSD16M64B8A HMD16M64B8A-10 HMD16M64B8A-10L HMD16M6 |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module.
Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
|
List of Unclassifed Manufacturers
ETC
Hanbit Electronics Co.,Ltd
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC100EP016AFAR2G MC100EP016AMNG |
3.3 V ECL 8−Bit Synchronous Binary Up Counter 100E SERIES, SYN POSITIVE EDGE TRIGGERED 8-BIT UP BINARY COUNTER, PQFP32
3.3 V ECL 8-Bit Synchronous Binary Up Counter
|
ON Semiconductor
|
| MC100EP016AFAR2 MC100EP016A MC100EP016AFA |
3.3 V ECL 8-Bit Synchronous Binary Up Counter 3.3伏ECL 8位二进制计数器同步最
3.3 V ECL 8-Bit Synchronous Binary Up Counter 100E SERIES, SYN POSITIVE EDGE TRIGGERED 8-BIT UP BINARY COUNTER, PQFP32
|
ONSEMI[ON Semiconductor]
|
| M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| FM93C06E FM93C06 FM93C06V FM93C06L FM93C06LZ FM93C |
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
From old datasheet system
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| K7A401800M |
256K x 18-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
256Kx18 Synchronous SRAM
|
Samsung Electronic
Samsung semiconductor
|
